生产厂家
![Vishay](/logo/Vishay.png)
Vishay Semiconductors
![Vishay](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
DESCRIPTION
CQY37N is an infrared, 950 nm emitting diode in GaAs technology molded in a miniature, clear plastic package with lens.
FEATURES
• Package type: leaded
• Package form: T-¾
• Dimensions (in mm): Ø 1.8
• Peak wavelength: λp = 950 nm
• High reliability
• Angle of half intensity: φ = ± 12°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matches with detector BPW17N
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
APPLICATIONS
• Radiation source in near infrared range
Infrared Emitting Diode, 950 nm, GaAs
Vishay Siliconix
Infrared Emitting Diode, 950 nm, GaAs
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs ( Rev : 2015 )
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs ( Rev : 2007 )
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs ( Rev : 2009 )
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs ( Rev : 2009 )
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs ( Rev : 2009 )
Vishay Siliconix
Infrared Emitting Diode, 950 nm, GaAs ( Rev : 2013 )
Vishay Siliconix