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CY7C1333 数据手册 ( 数据表 ) - Cypress Semiconductor

CY7C1333 image

零件编号
CY7C1333

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12 Pages

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179.3 kB

生产厂家
Cypress
Cypress Semiconductor Cypress

Functional Description
The CY7C1333 is a 3.3V, 64K by 32 Synchronous Flow-Through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1333 is equipped with the advanced No Bus Latency™ (NoBL™) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data through the SRAM, especially in systems that require frequent Write-Read transitions. The CY7C1333 is pin/functionally compatible to ZBT SRAM MT55L64L32F.


FEATUREs
• Pin compatible and functionally equivalent to ZBT™ device MT55L64L32F
• Supports 66-MHz bus operations with zero wait states
    — Data is transferred on every clock
• Internally self-timed output buffer control to eliminate the need to use OE
• Registered inputs for Flow-Through operation
• Byte Write capability
• 64K x 32 common I/O architecture
• Single 3.3V power supply
• Fast clock-to-output times
    — 12.0 ns (for 66-MHz device)
    — 14.0 ns (for 50-MHz device)
• Clock Enable (CEN) pin to suspend operation
• Synchronous self-timed writes
• Asynchronous output enable
• JEDEC-standard 100-pin TQFP package
• Burst Capability—linear or interleaved burst order
• Low (16.5 mW) standby power

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零件编号
产品描述 (功能)
PDF
生产厂家
64Kx32 Pipelined SRAM with NoBL™ Architecture
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256Kx18 Flow-Through SRAM with NoBL™ Architecture
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4-Mb (128K x 36) Flow-through SRAM with NoBL Architecture
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72-Mbit (2 M × 36) Flow-Through SRAM with NoBL™ Architecture ( Rev : 2012 )
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4-Mbit (256K x 18) Flow-through SRAM with NoBL™ Architecture ( Rev : 2007 )
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4-Mbit (128K x 36) Flow-through SRAM with NoBL™ Architecture
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4-Mb (256K x 18) Flow-through SRAM with NoBL™ Architecture
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