D1110 数据手册 ( 数据表 ) - Inchange Semiconductor
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D1110
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Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min)
• Good Linearity of hFE
• Complement to Type 2SB849
APPLICATIONS
• Designed for audio frequency power amplifier applications.
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