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D1950 数据手册 ( 数据表 ) - Renesas Electronics

2SD1950 image

零件编号
D1950

Other PDF
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page
6 Pages

File Size
1.7 MB

生产厂家
Renesas
Renesas Electronics Renesas

DESCRIPTION
The 2SD1950 is designed for general-purpose applications requiring High DC Current Gain.
This is suitable for all kind of driving or muting.


FEATURES
● High DC Current Gain and Good hFE linearity.
   hFE = 800 to 3 200 (VCE = 5.0 V, IC = 1.0 A)
● Low Collector Saturation Voltage.
   VCE(sat) = 0.18 V TYP. (IC = 1.0 A, IB = 10 mA)
● High VEBO : VEBO = 15 15V


零件编号
产品描述 (功能)
PDF
生产厂家
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Renesas Electronics

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