GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET
750mW – 12V – 1GHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE (Typical < 2dB NF)
• HIGH GAIN – 11dB MINIMUM
• SURFACE MOUNT
APPLICATIONS
• VHF/UHF COMMUNICATIONS from DC to 2.5 GHz