D2385 数据手册 ( 数据表 ) - Inchange Semiconductor
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D2385
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Inchange Semiconductor
Silicon NPN Darlington Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min)
·High DC Current Gain-
: hFE= 5000(Min)@IC= 7A
·Complement to Type 2SB1556
APPLICATIONS
·Designed for power amplifier applications
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