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D2387 数据手册 ( 数据表 ) - Toshiba

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零件编号
D2387

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  2001   2003  

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4 Pages

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Power Amplifier Applications
   
• High breakdown voltage: VCEO = 140 V (min)
• Complementary to 2SB1558
   

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TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
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TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)
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TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) ( Rev : 1997 )
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TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) ( Rev : 1997 )
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TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) ( Rev : 1997 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
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TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington) ( Rev : 2009 )
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