General Description
The K9F1208U0M is a 64M(67,108,864)x8bit NAND Flash Memory with a spare 2,048K(2,097,152)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command inputs. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data.

FEATUREs
· Voltage Supply : 2.7V~3.6V
· Organization
   - Memory Cell Array : (64M + 2,048K)bit x 8bit
   - Data Register : (512 + 16)bit x8bit multipled by four planes
· Automatic Program and Erase
   - Page Program : (512 + 16)Byte
   - Block Erase : (16K + 512)Byte
· 528-Byte Page Read Operation
   - Random Access : 12ms(Max.)
   - Serial Page Access : 50ns(Min.)
· Fast Write Cycle Time
   - Program time : 200ms(Typ.)
   - Block Erase Time : 2ms(Typ.)
· Command/Address/Data Multiplexed I/O Port
· Hardware Data Protection
   - Program/Erase Lockout During Power Transitions
· Reliable CMOS Floating-Gate Technology
   - Endurance : 100K Program/Erase Cycles
   - Data Retention : 10 Years
· Command Register Operation
· Intelligent Copy-Back Operation
· Package :
   - K9F1208U0M-YCB0, K9F1208U0M-YIB0 : 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
· Simultaneous Four Page/Block Program/Erase