General Description
The EM39LV040 is a 4M bits Flash memory organized as 512K x 8 bits. The EM39LV040 uses a single 3.0 volt-only power supply for both Read and Write functions. Featuring high performance Flash memory technology, the EM39LV040 provides a typical Byte-Program time of 11 µsec and a typical Sector-Erase time of 40 ms. The device uses Toggle Bit or Data# Polling to detect the completion of the Program or Erase operation. 

FEATUREs
◾ Single Power Supply
   Full voltage range from 2.7 to 3.6 volts
   for both read and write operations
   Regulated voltage range: 3.0 to 3.6 volts
   for both read and write operations
◾ Sector-Erase Capability
   Uniform 4Kbyte sectors
◾ Sector-Erase Capability
   Uniform 64Kbyte sectors
◾ Read Access Time
   Access time: 45, 55, 70 and 90 ns
◾ Power Consumption
   Active current: 5 mA (Typical)
   Standby current: 1 µA (Typical)
◾ Erase/Program Features
   Sector-Erase Time: 40 ms (Typical)
   Chip-Erase Time: 40 ms (Typical)
   Byte-Program Time: 11µs (Typical)
   Chip Rewrite Time: 6 seconds (Typical)
◾ End-of-Program or End-of-Erase
   Detection
   Data# Polling
   Toggle Bit
◾ CMOS I/O Compatibility
◾ JEDEC Standard
   Pin-out and software command sets
   compatible with single-power supply
   |Flash memory
◾ High Reliability
   Endurance cycles: 100K (Typical)
   Data retention: 10 years
◾ Package Option
   32-pin PLCC
   32-pin TSOP