MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
FEATUREs
• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting
• [MOSFET]
• Low ON-resistance
• 1.8V drive
• [SBD]
• Small switching noise
• Low forward voltage (IF=2.0A, VF max=0.46V)
• Halogen free compliance