GENERAL DESCRIPTION
The EN29GL256 offers a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. It features a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

FEATURES
• Single power supply operation
   - Full voltage range: 2.7 to 3.6 volts read and
      write operations
• High performance
   - Access times as fast as 90 ns
• VIO Input/Output 1.65 to 3.6 volts
   - All input levels (address, control, and DQ input
      levels) and outputs are determined by voltage
      on VIO input. VIO range is 1.65 to VCC
• 8-word/16-byte page read buffer
• 32-word/64-byte write buffer reduces overall
   programming time for multiple-word updates
• Secured Silicon Sector region
   - 128-word/256-byte sector for permanent,
      secure identification through an 8-word/16-
      byte random Electronic Serial Number
   - Can be programmed and locked at the factory
      or by the customer
• Uniform 64Kword/128KByte Sector
   Architecture Two hundred fifty-six sectors
• Suspend and Resume commands for
   Program and Erase operations
• Write operation status bits indicate program
   and erase operation completion
• Support for CFI (Common Flash Interface)
• Persistent methods of Advanced Sector
   Protection
• WP#/ACC input
   - Accelerates programming time (when VHH is
      applied) for greater throughput during system
      production
   - Protects first or last sector regardless of
      sector protection settings
• Hardware reset input (RESET#) resets
   device
• Ready/Busy# output (RY/BY#) detects
   program or erase cycle completion
• Minimum 100K program/erase endurance
   cycles.
• Package Options
   - 56-pin TSOP
   - 64-ball 11mm x 13mm BGA
• Industrial Temperature Range.