EPA120E 数据手册 ( 数据表 ) - Excelics Semiconductor, Inc.
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EPA120E
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Excelics Semiconductor, Inc.
High Efficiency Heterojunction Power FET
• +29.5dBm TYPICAL OUTPUT POWER
• 9.5dB TYPICAL POWER GAIN FOR EPA120E AND
10.5dB FOR EPA120EV AT 18GHz
• 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
• EPA120EV WITH VIA HOLE SOURCE GROUNDING
• Idss SORTED IN 30mA PER BIN RANGE
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