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FCPF190N60E(2012) 数据手册 ( 数据表 ) - Fairchild Semiconductor

FCP190N60E image

零件编号
FCPF190N60E

产品描述 (功能)

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10 Pages

File Size
226.9 kB

生产厂家
Fairchild
Fairchild Semiconductor Fairchild

Description
SuperFET®II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET®II is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.


FEATUREs
• 650V @TJ = 150°C
• Max. RDS(on) = 190mΩ
• Ultra Low Gate Charge (Typ. Qg = 63nC)
• Low Effective Output Capacitance (Typ. Coss.eff = 178pF)
• 100% Avalanche Tested


零件编号
产品描述 (功能)
PDF
生产厂家
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