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FD30H100S 数据手册 ( 数据表 ) - STMicroelectronics

FERD30H100S image

零件编号
FD30H100S

Other PDF
  2016  

PDF
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page
13 Pages

File Size
477.4 kB

生产厂家
ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given silicon surface. This 100 V rectifier has been optimized for use in confined casing applications where both efficiency and thermal performance matter. With a lower dependency of leakage current (IR) and forward voltage (VF) in function of temperature, the thermal runaway risk is reduced. Therefore, it can advantageously replace 100 V Schottky diodes.


FEATUREs
• ST advanced rectifier process
• Stable leakage current over reverse voltage
• Reduced leakage current
• Low forward voltage drop
• High frequency operation
• ECOPACK®2 compliant component


零件编号
产品描述 (功能)
PDF
生产厂家
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