General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
   
Features
• 50 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V
                     RDS(ON) = 10.5 mΩ @ VGS = 4.5 V
• Low gate charge (27 nC typical)
• Fast switching speed
• High performance trench technology for extremely
    low RDS(ON)
• 175°C maximum junction temperature rating