General Description
These N & P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate
charge for superior switching performance.

FEATUREs
• N-Channel 2.7A, 20V. RDS(on) = 0.08Ω @ VGS = 4.5V
                              RDS(on) = 0.12Ω @ VGS = 2.5V
• P-Channel -1.6A, -20V.RDS(on) = 0.17Ω @ VGS = -4.5V
                                RDS(on)= 0.25Ω @ VGS = -2.5V
• Fast switching speed.
• Low gate charge.
• High performance trench technology for extremely low RDS(ON).
• SuperSOTTM -6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).

APPLICATIONs
• DC/DC converter
• Load switch
• Motor driving