General Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Formerly developmental type 83317

FEATUREs
• Fast switching
• rDS(ON) = 0.058Ω (Typ), VGS = 10V, ID = 9A
• rDS(ON) = 0.090Ω (Typ), VGS = 4.5V, ID = 6A
• Qg(TOT) (Typ) = 2.6nC, VGS = 5V
• Qgd (Typ) = 0.8nC
• CISS (Typ) = 255pF

APPLICATIONs
• DC/DC converters