General Description
These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

FEATUREs
Q1: N-Channel
◾ Max rDS(on) = 12 mΩ at VGS = 10 V, ID = 12 A
◾ Max rDS(on) = 15 mΩ at VGS = 4.5 V, ID = 11 A

Q2: P-Channel
◾ Max rDS(on) = 17 mΩ at VGS = -10 V, ID = -10 A
◾ Max rDS(on) = 27 mΩ at VGS = -4.5 V, ID = -8.3 A
◾ 100% UIL Tested
◾ RoHS Compliant

APPLICATIONs
◾ Inverter
◾ H-Bridge