General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.

FEATUREs
■ Dual CoolTM Top Side Cooling PQFN package
■ Max rDS(on) = 0.99 mΩ at VGS = 10 V, ID = 36 A
■ Max rDS(on) = 1.55 mΩ at VGS = 4.5 V, ID = 32 A
■ High performance technology for extremely low rDS(on)
■ RoHS Compliant

APPLICATIONs
■ Synchronous Rectifier for DC/DC Converters
■ Telecom Secondary Side Rectification
■ High End Server/Workstation