General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.

FEATUREs
■ 33 A, 30 V. RDS(ON) = 0.022 Ω @ VGS=10 V RDS(ON) = 0.036 Ω @ VGS=4.5 V.
■ Critical DC electrical parameters specified at elevated temperature.
■ Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
■ High density cell design for extremely low RDS(ON).
■ 175°C maximum junction temperature rating.