General Description
This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V).

FEATUREs
• –9 A, –12 V. RDS(ON) = 11 mΩ @ VGS = –4.5 V RDS(ON) = 14 mΩ @ VGS = –2.5 V RDS(ON) = 20 mΩ @ VGS = –1.8 V
• Rds ratings for use with 1.8 V logic
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• Low profile TSSOP-8 package

APPLICATIONs
• Load switch
• Motor drive
• DC/DC conversion
• Power management