DESCRIPTION
FIR11NS65AFG is an N-channel enhancement mode high voltage power MOSFETs produced using DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies.

FEATURES
✦ 11A,650V, RDS(on)(typ.)=0.33@VGS=10V
✦ New revolutionary high voltage technology
✦ Ultra low gate charge
✦ Periodic avalanche rated
✦ Extreme dv/dt rated
✦ High peak current capability