Description
The FM25L04B is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.

FEATUREs
4K bit Ferroelectric Nonvolatile RAM
• Organized as 512 x 8 bits
• High Endurance 100 Trillion (1014) Read/Writes
• 38 Year Data Retention (@ +75ºC)
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process

Very Fast Serial Peripheral Interface - SPI
• Up to 20 MHz Frequency
• Direct Hardware Replacement for EEPROM
• SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

Sophisticated Write Protection Scheme
• Hardware Protection
• Software Protection

Low Power Consumption
• Low Voltage Operation 2.7-3.6V
• 200 µA Active Current (1 MHz)
• 3 µA (typ.) Standby Current

Industry Standard Configuration
• Industrial Temperature -40°C to +85°C
• 8-pin “Green”/RoHS SOIC and TDFN Packages