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FM28V020 数据手册 ( 数据表 ) - Cypress Semiconductor

FM28V020 image

零件编号
FM28V020

产品描述 (功能)

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page
16 Pages

File Size
342.3 kB

生产厂家
Cypress
Cypress Semiconductor Cypress

General Description
The FM28V020 is a 32K x 8 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and virtually unlimited write endurance make F-RAM superior to other types of memory.


FEATUREs
256Kbit Ferroelectric Nonvolatile RAM
● Organized as 32K x 8
● 1014 Read/Write Cycles
● NoDelay™ Writes
● Page Mode Operation
● Advanced High-Reliability Ferroelectric Process

Superior to Battery-backed SRAM Modules
● No battery concerns
● Monolithic reliability
● True surface mount solution, no rework steps
● Superior for moisture, shock, and vibration
● Resistant to negative voltage undershoots

SRAM Replacement
● JEDEC 32Kx8 SRAM pinout
● 70 ns Access Time, 140 ns Cycle Time

Low Power Operation
● 2.0V – 3.6V Power Supply
● Standby Current 90μA (typ)
● Active Current 5μmA (typ)

Industry Standard Configurations
● Industrial Temperature -40°C to +85°C
● 28-pin “Green”/RoHS SOIC (-SG)
● 28-pin “Green”/RoHS TSOP (-T28G)
● 32-pin “Green”/RoHS TSOP (-TG)


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