Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
FEATUREs
• 16A, 250V, RDS(on) = 0.23 Ω @VGS = 10 V
• Low gate charge ( typical 27 nC)
• Low Crss ( typical 23 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability