Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

FEATUREs
• 7.6 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 3.8 A
• Low Gate Charge (Typ. 13 nC)
• Low Crss (Typ. 14 pF)
• 100% Avalanche Tested
• Low level gate drive requirement allowing direct operation from logic drivers