生产厂家
![ONSEMI](/logo/ONSEMI.png)
ON Semiconductor
![ONSEMI](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
FEATUREs
• 4.0 A, 900 V, RDS(on) = 4.2 Ω (Max.) @ VGS = 10 V,
ID = 2.0 A
• Low Gate Charge (Typ. 17 nC)
• Low Crss (Typ. 5.6 pF)
• 100% Avalanche Tested
N-Channel PowerTrench® MOSFET 80 V, 100 A, 4.2 mΩ
Fairchild Semiconductor
N-Channel QFET® MOSFET 400 V, 0.45 A, 4.2 Ω
Fairchild Semiconductor
N-Channel PowerTrench® MOSFET 80 V, 100 A, 4.2 mΩ
ON Semiconductor
N-Channel QFET® MOSFET 900 V, 6.0 A, 2.3Ω
Fairchild Semiconductor
N-Channel QFET® MOSFET 900 V, 11.0 A, 1.1 Ω
ON Semiconductor
N-Channel QFET® MOSFET 900 V, 5.4 A, 2.3 Ω
ON Semiconductor
N-Channel QFET® MOSFET 900 V, 8.0 A, 1.4 Ω
Fairchild Semiconductor
N-Channel QFET® MOSFET 900 V, 6 A, 2.3 Ω
Fairchild Semiconductor
N-Channel QFET® MOSFET 900 V, 11.4 A, 960 mΩ
ON Semiconductor
N-Channel MOSFET 500V, 4.2 A, 1.58Ω
MagnaChip Semiconductor