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G20N60C3 数据手册 ( 数据表 ) - Intersil

20N60C3 image

零件编号
G20N60C3

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This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C.


FEATUREs
• 45A, 600V, TC = 25°C
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
• Related Literature
    - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

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零件编号
产品描述 (功能)
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生产厂家
45A, 600V, UFS Series N-Channel IGBT
Fairchild Semiconductor
45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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75A, 600V, UFS Series N-Channel IGBT
Fairchild Semiconductor
60A, 600V, UFS Series N-Channel IGBT
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60A, 600V, UFS Series N-Channel IGBT
Intersil
70A, 600V, UFS Series N-Channel IGBT
Intersil
45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Intersil
75A, 600V, UFS Series N-Channel IGBT
Intersil
70A, 600V, UFS Series N-Channel IGBT
Harris Semiconductor
63A, 600V, UFS Series N-Channel IGBT
Intersil

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