GaAs PIN photodiode array

Photodiode array for data communication

FEATUREs
● Active area: φ0.06 mm
   Element pitch: 250 µm
   4-element array
● High-speed response: 10 Gbps [(2.5 Gbps per channel) ×4]
   at low bias voltage (VR=2 V)
● Low dark current, low capacitance
● Up to 16 elements available as option

APPLICATIONs
● Optical fiber communications
● High-speed data link