datasheetbank_Logo
数据手册搜索引擎和 Datasheet免费下载 PDF
HOME  >>>  GeneSiC Semiconductor, Inc.  >>> GC02MPS12-252 PDF

GC02MPS12-252(2018) 数据手册 ( 数据表 ) - GeneSiC Semiconductor, Inc.

GC02MPS12-252 image

零件编号
GC02MPS12-252

Other PDF
  lastest PDF  

PDF
DOWNLOAD     

page
7 Pages

File Size
1.6 MB

生产厂家
GENESIC
GeneSiC Semiconductor, Inc. GENESIC

Features
• High Avalanche (UIS) Capability
• Enhanced Surge Current Capability
• 175 °C Maximum Operating Temperature
• Temperature Independent Switching Behavior
• Positive Temperature Coefficient Of VF
• Extremely Fast Switching Speeds
• Superior Figure of Merit QC/IF

Advantages
• Low Standby Power Losses
• Improved Circuit Efficiency (Lower Overall Cost)
• Low Switching Losses
• Ease of Paralleling Devices without Thermal Runaway
• Smaller Heat Sink Requirements
• Low Reverse Recovery Current
• Low Device Capacitance
• Low Reverse Leakage Current at Operating Temperature


APPLICATIONs
• Power Factor Correction (PFC)
• Switched-Mode Power Supply (SMPS)
• Solar Inverters
• Wind Turbine Inverters
• Motor Drives
• Induction Heating
• Uninterruptible Power Supply (UPS)
• High Voltage Multipliers


零件编号
产品描述 (功能)
PDF
生产厂家
Silicon Carbide Power Schottky Diode
ComChip
Silicon Carbide Power Schottky Diode
ComChip
Silicon Carbide Power Schottky Diode
ComChip
Silicon Carbide Power Schottky Diode
ComChip
Silicon Carbide Power Schottky Diode
ComChip
Silicon Carbide Power Schottky Diode ( Rev : 2018 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode ( Rev : 2014 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode ( Rev : 2018 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode ( Rev : 2014 )
GeneSiC Semiconductor, Inc.
Silicon Carbide Power Schottky Diode ( Rev : 2014 )
GeneSiC Semiconductor, Inc.

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Japanese日本語 Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]