Description :
The GLT4160M04 is a high-performance CMOS dynamic random access memory containing 16,777,216 bits organized in a x4 configuration. The GLT4160M04 offers page cycle access with Extended Data Output. The GLT4160M04 has 11 row- and 11 column-addresses, and accepts 2048-cycle refresh in 32 ms.
The GLT4160M04 provides EDO PAGE MODE operation which allows for fast data access within a row-address defined boundary, up to 2048 x 4 bits with cycle times as short as 25ns.

FEATUREs :
* 4,194,304 words by 4 bits organization.
* Fast access time and cycle time
* Low power dissipation.
* Read-Modify-Write, RAS -Only Refresh, CAS -Before-RAS Refresh, Hidden Refresh.
* 2,048 refresh cycles per 32ms.
* Available in 300 mil 26(24) SOJ and TSOPII.
* 2.5V±0.2V Vcc Power Supply voltage.
* All inputs and Outputs are LVTTL compatible.
* Extended Data-Out (EDO) Page access cycle.
* Self-refresh Capability. (S-Version).