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GM72V66841CT_CLT 数据手册 ( 数据表 ) - LG

GM72V66841CLT image

零件编号
GM72V66841CT_CLT

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57 Pages

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生产厂家
LG
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Description
The GM72V66841CT/CLT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously by referring to the positive edge of the externally provided Clock.
The GM72V66841CT/CLT provides four banks of 2,097,152 word by 8 bit to realize high bandwidth with the Clock frequency up to 125 Mhz.


FEATUREs
*  PC100,PC66 Compatible 7K(2-2-2), 7J(3-2-2), 10K(PC66)
* 3.3V single Power supply
* LVTTL interface
* Max Clock frequency 100/125 MHz
* 4,096 refresh cycle per 64 ms
* Two kinds of refresh operation Auto refresh/ Self refresh
* Programmable burst access capability ;
- Sequence:Sequential / Interleave
- Length :1/2/4/8/FP
* Programmable CAS latency : 2/3
* 4 Banks can operate independently or simultaneously
* Burst read/burst write or burst read/single write operation capability
* Input and output masking by DQM input
* One Clock of back to back read or write command interval
* Synchronous Power down and Clock suspend capability with one Clock latency for both entry and exit
*JEDEC Standard 54Pin 400mil TSOP II Package

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零件编号
产品描述 (功能)
PDF
生产厂家
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
Hynix Semiconductor
4-Bank · 2,097,152-Word · 8-Bit SYNCHRONOUS DYNAMIC RAM
Oki Electric Industry
4-Bank x 4,194,304-Word x 4-Bit SYNCHRONOUS DYNAMIC RAM
Oki Electric Industry
4-Bank x 1,048,576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
Oki Electric Industry
4-Bank x 524,288-Word x 32-Bit SYNCHRONOUS DYNAMIC RAM
Oki Electric Industry
4-Bank x 1,048,576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
LAPIS Semiconductor Co., Ltd.
2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM
Oki Electric Industry
2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM
Oki Electric Industry
2-Bank x 1,048,576 Word x 8 Bit SYNCHRONOUS DYNAMIC RAM
Oki Electric Industry
2-Bank x 524,288 Word x 16 Bit SYNCHRONOUS DYNAMIC RAM
Oki Electric Industry

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