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GP401DDM18 数据手册 ( 数据表 ) - Dynex Semiconductor

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零件编号
GP401DDM18

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The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A.
The GP401DDM18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT) to minimise conduction losses, the module is of particular relevance in low to medium frequency applications. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability


FEATURES
■ Low VCE(SAT)
■ 400A Per Switch
■ High Thermal Cycling Capability
■ Non Punch Through Silicon
■ Isolated MMC Base with AlN Substrates


APPLICATIONS
■ High Reliability
■ Motor Controllers
■ Traction Drives
■ Low Loss System Retrofit

 

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