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GS816118T-133 数据手册 ( 数据表 ) - Giga Semiconductor

GS816118T-250 image

零件编号
GS816118T-133

Other PDF
  2004  

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page
36 Pages

File Size
668 kB

生产厂家
GSI
Giga Semiconductor GSI

Functional Description
Applications
The GS816118/36T is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support.


FEATUREs
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard package

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零件编号
产品描述 (功能)
PDF
生产厂家
1M x 18, 512K x 36 18Mb Sync Burst SRAMs
Giga Semiconductor
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
Giga Semiconductor
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
Giga Semiconductor
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
Giga Semiconductor
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
Giga Semiconductor
1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
Giga Semiconductor
1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
Giga Semiconductor
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
Giga Semiconductor
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
Giga Semiconductor
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
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