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GS820E32AT-150 数据手册 ( 数据表 ) - Giga Semiconductor

GS820E32AT-150 image

零件编号
GS820E32AT-150

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23 Pages

File Size
283.4 kB

生产厂家
GSI
Giga Semiconductor GSI

Functional Description
Applications
The GS820E32A is a 2,097,152 bit high performance synchronous SRAM with a 2 bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPU’s, the device now finds application in synchronous SRAM applications ranging from DSP main store to networking chip set support.


FEATUREs
• FT pin for user configurable flow through or pipelined operation.
• Dual Cycle Deselect (DCD) Operation.
• 3.3V +10%/-5% Core power supply
• 2.5V or 3.3V I/O supply.
• LBO pin for linear or interleaved burst mode.
• Internal input resistors on mode pins allow floating mode pins.
• Default to Interleaved Pipelined Mode.
• Byte write (BW) and/or global write (GW) operation.
• Common data inputs and data outputs.
• Clock Control, registered, address, data, and control.
• Internal Self-Timed Write cycle.
• Automatic power-down for portable applications.
• JEDEC standard 100-lead TQFP or QFP package.

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零件编号
产品描述 (功能)
PDF
生产厂家
64K x 32 2M Synchronous Burst SRAM
Giga Semiconductor
64K x 32 2M Synchronous Burst SRAM
Giga Semiconductor
64K x 32 2M Synchronous Burst SRAM
Giga Semiconductor
64K x 32 2M Synchronous Burst SRAM
Giga Semiconductor
64K x 32 2M Synchronous Burst SRAM
Unspecified
64K x 32 2M Synchronous Burst SRAM
Giga Semiconductor
64K x 32 2M Synchronous Burst SRAM
Giga Semiconductor
64K x 32 2M Synchronous Burst SRAM
Giga Semiconductor
64K x 32 2M Synchronous Burst SRAM
Unspecified
64K x 32 2Mb Synchronous Burst SRAM
Giga Semiconductor

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