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GT8G131 数据手册 ( 数据表 ) - Toshiba

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零件编号
GT8G131

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Toshiba
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Strobe Flash Applications

•  Supplied in Compact and Thin Package Requires Only a Small Mounting Area
•  4th generation (trench gate structure) IGBT
•  Enhancement-mode
•  4-V gate drive voltage: VGE= 4.0 V (min) (@IC= 150 A)
•  Peak collector current: IC= 150 A (max)

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Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
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IGBT / Insulated Gate Bipolar Transistor Silicon N-Channel
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Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT ( Rev : V2 )
Toshiba

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