H7N0308AB 数据手册 ( 数据表 ) - Renesas Electronics
零件编号
H7N0308AB
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PDF
page
7 Pages
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75 kB
生产厂家
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
FEATUREs
• Low on-resistance
RDS (on)= 3.8 mΩ typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source
零件编号
产品描述 (功能)
PDF
生产厂家
Silicon N Channel MOS FET High Speed Power Switching ( Rev : 2006 )
Renesas Electronics
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