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HAF2021 数据手册 ( 数据表 ) - Renesas Electronics

HAF2021 image

零件编号
HAF2021

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9 Pages

File Size
86.9 kB

生产厂家
Renesas
Renesas Electronics Renesas

Description
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.

Features
•  Logic level operation (6 V Gate drive)
•  High endurance capability against to the short circuit
•  Built–in the over temperature shut–down circuit
•  Latch type shut–down operation (Need 0 voltage recovery)

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零件编号
产品描述 (功能)
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生产厂家
Silicon N Channel MOS FET Series Power Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET Series Power Switching
Renesas Electronics
Silicon N Channel MOS FET Series Power Switching
Renesas Electronics
Silicon N Channel MOS FET Series Power Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET Series Power Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET Series Power Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET Series Power Switching
Renesas Electronics
Silicon N Channel MOS FET Series Power Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET Series Power Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET Series Power Switching
Hitachi -> Renesas Electronics

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