The HGTP2N120BND and HGT1S2N120BNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49312. The Diode used is the development type TA49056.

FEATUREs
• 12A, 1200V, TC = 25°C
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 160ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model www.intersil.com
• Related Literature
    - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”