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HM621400HCLJP-10 数据手册 ( 数据表 ) - Hitachi -> Renesas Electronics

HM621400HC image

零件编号
HM621400HCLJP-10

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14 Pages

File Size
57.4 kB

生产厂家
Hitachi
Hitachi -> Renesas Electronics Hitachi

Description
The HM621400HC is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell)and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The HM621400HC is packaged in 400-mil 32-pin SOJ for high density surface mounting.


FEATUREs
• Single 5.0 V supply: 5.0 V ± 10 %
• Access time: 10 ns (max)
• Completely static memory
    - No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
    - All inputs and outputs
• Operating current: 140 mA (max)
• TTL standby current: 40 mA (max)
• CMOS standby current: 5 mA (max) : 1.2 mA (max) (L-version)
• Data retension current: 0.8 mA (max) (L-version)
• Data retension voltage: 2 V (min) (L-version)
• Center VCC and VSS type pinout

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零件编号
产品描述 (功能)
PDF
生产厂家
4M High Speed SRAM (1-Mword × 4-bit)
Hitachi -> Renesas Electronics
4M High Speed SRAM (1-Mword × 4-bit)
Hitachi -> Renesas Electronics
4M High Speed SRAM (1-Mword × 4-bit)
Hitachi -> Renesas Electronics
4M High Speed SRAM (4-Mword × 1-bit)
Hitachi -> Renesas Electronics
4M High Speed SRAM (1-Mword × 4-bit)
Hitachi -> Renesas Electronics
4M High Speed SRAM (1-Mword × 4-bit)
Renesas Electronics
4M high Speed SRAM (256-kword × 16-bit)
Hitachi -> Renesas Electronics
4M High Speed SRAM (512-kword × 8-bit)
Renesas Electronics
4M High Speed SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
4M High Speed SRAM (256-kword × 16-bit)
Hitachi -> Renesas Electronics

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