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HM6264BLPI-10 数据手册 ( 数据表 ) - Hitachi -> Renesas Electronics

HM6264BI image

零件编号
HM6264BLPI-10

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17 Pages

File Size
61.4 kB

生产厂家
Hitachi
Hitachi -> Renesas Electronics Hitachi

Description
The Hitachi HM6264BI is 64k-bit static RAM organized 8-kword × 8-bit. It realizes higher performance and low power consumption by 1.5 µm CMOS process technology. The device, packaged in 450 mil SOP (foot print pitch width), 600 mil plastic DIP, is available for high density mounting.


FEATUREs
• Single 5 V supply: 5 V ± 10%
• Access time: 100/120 ns (max)
• Power dissipation:
   Standby: 10 µW (typ)
   Operation: 15 mW (typ) (f = 1 MHz)
• Completely static memory
   No clock or timing strobe required
• Equal access and cycle times
• Common data input and output
   Three state output
• Directly TTL compatible
   All inputs and outputs
• Battery backup operation capability
• Operating temperature range: –40˚C to +85˚C

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零件编号
产品描述 (功能)
PDF
生产厂家
Wide Temperature Range Version 4M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
Wide Temperature Range Version 4M SRAM (512-kword × 8-bit)
Renesas Electronics
Wide Temperature Range Version 4 M SRAM (512-kword × 8-bit)
Renesas Electronics
Wide Temperature Range Version 4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
Wide Temperature Range Version 4 M SRAM (512-kword × 8-bit)
Hitachi -> Renesas Electronics
Wide Temperature Range Version 4 M SRAM (512-kword x 8-bit)
Renesas Electronics
64k EEPROM (8-kword × 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version
Renesas Electronics
Wide Temperature Range Version 4 M SRAM (256-kword × 16-bit)
Hitachi -> Renesas Electronics
Wide Temperature Range Version 4 M SRAM (256-kword × 16-bit)
Renesas Electronics
Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit / 2-Mword × 8-bit)
Renesas Electronics

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