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HMC817LP4E 数据手册 ( 数据表 ) - Hittite Microwave

HMC817LP4E image

零件编号
HMC817LP4E

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8 Pages

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Hittite
Hittite Microwave Hittite

General Description
   The HMC817LP4E is a GaAs PHEMT Dual Channel Low Noise Amplifi er that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 550 and 1200 MHz. The amplifi er has been optimized to provide 0.5 dB noise fi gure, 24 dB gain and +37 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent with minimal external matching and bias decoupling components. The HMC817LP4E shares the same package and pinout with the HMC816LP4E and HMC818LP4E LNAs. The HMC817LP4E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of each channel of the LNA for each application.


FEATUREs
   Noise Figure: 0.5 dB
   Gain: 16 dB
   Output IP3: +37 dBm
   Single Supply: +3V to +5V
   50 Ohm Matched Input/Output
   24 Lead 4x4mm QFN Package: 16 mm2

Typical Applications
The HMC817LP4E is ideal for:
• Cellular/3G and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femtocells
• Multi-Channel Applications
• Access Points


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