datasheetbank_Logo
数据手册搜索引擎和 Datasheet免费下载 PDF
HOME  >>>  ETC  >>> HMG20N60A PDF

HMG20N60A 数据手册 ( 数据表 ) - ETC

HMG20N60A image

零件编号
HMG20N60A

Other PDF
  no available.

PDF
DOWNLOAD     

page
5 Pages

File Size
319.3 kB

生产厂家
ETC
ETC ETC

[Shenzhen Huazhimei Semiconductor Co., Ltd]

description
HMG20N60A insulated gate bipolar transistor adopts a new generation of field stop (Field Stop) process production, with low conduction loss and switching loss, the positive temperature coefficient is easy to combine Linked applications and other features. This product can be applied to induction heating UPS, SMPS and PFC etc. area.


FEATUREs
♦ 20A, 600V, VCE(sat)(typical value)=2.0V@IC=20A
♦ Low conduction loss
♦ Ultra-fast switching speed
♦ High breakdown voltage


零件编号
产品描述 (功能)
PDF
生产厂家
600V Insulated Gate Bipolar Transistor
Unspecified
650V 20A Insulated Gate Bipolar Transistor
ROHM Semiconductor
40A, 600V Insulated Gate Bipolar Transistor
Unspecified
Insulated Gate Bipolar Transistor
ON Semiconductor
Insulated Gate Bipolar Transistor
ON Semiconductor
Insulated Gate Bipolar Transistor
Toshiba
Insulated Gate Bipolar Transistor
Motorola => Freescale
Insulated Gate Bipolar Transistor
Renesas Electronics
Insulated Gate Bipolar Transistor
International Rectifier
Insulated Gate Bipolar Transistor ( Rev : 2013 )
International Rectifier

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Japanese日本語 Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]