HN4B102J(2009) 数据手册 ( 数据表 ) - Toshiba
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HN4B102J
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MOS Gate Drive Applications
Switching Applications
• Small footprint due to a small and thin package
• High DC current gain : PNP hFE = 200 to 500 (IC =－0.2 A)
: NPN hFE = 200 to 500 (IC = 0.2 A)
• Low collector-emitter saturation : PNP VCE (sat) =－ 0.20 V (max)
: NPN VCE (sat) = 0.14 V (max)
• High-speed switching : PNP tf = 40 ns (typ.)
: NPN tf = 45 ns (typ.)
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