HSK1118 数据手册 ( 数据表 ) - Hi-Sincerity Microelectronics
零件编号
HSK1118
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Hi-Sincerity Microelectronics
Description
• Field Effect Transistor.
• Silicon N Channel MOS Type.
• High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications
FEATUREs
• 4-Volt Gate Drive
• Low Drain-Source On Resistanc - RDS(on)=0.95Ω (Typ.)
• High Forward Transfer Admittance - | Yfs |=4.0S (Typ.)
• Low Leakage Current - IDSS = 300uA (Max.) @VDS = 600V
• Enhancement-Mode - Vth = 1.5~3.5V @VDS = 10V, ID = 1mA
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