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HVV1214-025S 数据手册 ( 数据表 ) - HVVi Semiconductors, Inc.

HVV1214-025S image

零件编号
HVV1214-025S

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page
2 Pages

File Size
222.2 kB

生产厂家
HVVI
HVVi Semiconductors, Inc. HVVI

DESCRIPTION
The high power HVV1214-25 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1.2 GHz to 1.4 GHz. 


FEATURES
• High Power Gain
• Excellent Ruggedness
• 48V Supply Voltage


零件编号
产品描述 (功能)
PDF
生产厂家
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty ( Rev : V2 )
HVVi Semiconductors, Inc.
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications
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L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
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L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty for Ground Based Radar Applications
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