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HY27UF081G2A 数据手册 ( 数据表 ) - Hynix Semiconductor

HY27UF081G2A image

零件编号
HY27UF081G2A

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46 Pages

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395.1 kB

生产厂家
Hynix
Hynix Semiconductor Hynix

SUMMARY DESCRIPTION
The Hynix HY27UF(08/16)1G2A series is a 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 3.3V Vcc Power Supply.
Its NAND cell provides the most cost-effective solution for the solid state massstorage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The device contains 1024 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells.

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零件编号
产品描述 (功能)
PDF
生产厂家
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
Hynix Semiconductor
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
Hynix Semiconductor
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
Hynix Semiconductor
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
Hynix Semiconductor
H27UAG8T2C / NAND Flash
Hynix Semiconductor
32Gb NAND FLASH
Hynix Semiconductor
NAND Flash Memory
Micron Technology
8Gbit (1Gx8bit) NAND Flash
Hynix Semiconductor
4Gbit (512Mx8bit) NAND Flash
Hynix Semiconductor
NAND Flash Memory Controller
Oki Electric Industry

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