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HY57V648010 数据手册 ( 数据表 ) - Hynix Semiconductor

HY57V648010 image

零件编号
HY57V648010

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15 Pages

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884.5 kB

生产厂家
Hynix
Hynix Semiconductor Hynix

DESCRIPTION
The HY57V648010, HY57V648020, HY57V658010, HY57V658020, HY57V648011, HY57V648021, HY57V658011, HY57V658021 are high speed 3.3V Synchronous DRAMs and fabricated with the Hyundai CMOS process. Each bank shares the same chip inputs and outputs but can be independently operated. The Synchronous devices are compatible with the JEDEC functional description and pinout, offering fully synchronous operation.

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零件编号
产品描述 (功能)
PDF
生产厂家
Synchronous DRAM 8M x 8 Bit x 4 Banks
A-Data Technology
Synchronous DRAM 8M x 8 Bit x 4 Banks
A-Data Technology
16M x 8, 8M x16 128Mb SYNCHRONOUS DRAM
Integrated Silicon Solution
4 Banks x 8M x 8Bit Synchronous DRAM
Hynix Semiconductor
4 Banks x 8M x 16Bit Synchronous DRAM
Hynix Semiconductor
Synchronous DRAM 4M x 8 Bit x 4 Banks
A-Data Technology
Synchronous DRAM 4M x 8 Bit x 4 Banks
A-Data Technology
8M x 36-Bit EDO - DRAM Module
Infineon Technologies
8M x 36-Bit EDO - DRAM Module
Siemens AG
8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM
Taiwan Memory Technology

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