DESCRIPTION
The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576 x 16.

FEATURES
• Single 3.3±0.3V power supplyNote)
• All device pins are compatible with LVTTL interface
• JEDEC standard 400mil 54 pin TSOP-II with 0.8mm of pin pitch
• All inputs and outputs referenced to positive edge of system clock
• Data mask function by UDQM or LDQM
• Internal four banks operation
• Auto refresh and self refresh
• 4096 refresh cycles/64ms
• Programmable Burst Length and Burst Type
    -1, 2, 4, 8 or Full page for Sequential Burst
    -1, 2, 4 or 8 for Interleave Burst
• Programmable CAS Latency; 2, 3 Clocks