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IC42S32200 数据手册 ( 数据表 ) - Integrated Circuit Systems

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零件编号
IC42S32200

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ICST
Integrated Circuit Systems ICST

DESCRIPTION
The ICSI IC42S32200 and IC42S32200L is a high-speed CMOS configured as a quad 512K x 32 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal,CLK).
Each of the 512K x 32 bit banks is organized as 2048 rows by 256 columns by 32 bits.Read and write accesses start at a selected locations in a programmed sequence. Accesses begin with the registration of a BankActive command which is then followed by a Read or Write command


FEATURES
• Concurrent auto precharge
• Clock rate:166/143/125 MHz
• Fully synchronous operation
• Internal pipelined architecture
• Four internal banks (512K x 32bit x 4bank)
• Programmable Mode
    -CAS#Latency:2 or 3
    -Burst Length:1,2,4,8,or full page
    -Burst Type:interleaved or linear burst
    -Burst-Read-Single-Write
• Burst stop function
• Individual byte controlled by DQM0-3
• Auto Refresh and Self Refresh
• 4096 refresh cycles/64ms
• Single +3.3V ±0.3V power supply
• Interface:LVTTL
• Package:400 x 875 mil,86 Pin TSOP-2,0.50mm Pin Pitch and 11x13mm, 90 Ball BGA, Ball pitch 0.8mm
• Pb-free package is available.

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零件编号
产品描述 (功能)
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生产厂家
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Silicon Solution
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Silicon Solution
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Silicon Solution
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Silicon Solution
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Device Technology
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Silicon Solution
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Silicon Solution
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM ( Rev : 2004 )
Integrated Silicon Solution
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Silicon Solution
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Silicon Solution

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